| 摘要 |
The invention relates to a semiconductor structure comprising a substrate (100), a source region (110) which is formed in the substrate (100), a drain region which is formed in the substrate (100), and a dopant having a first type of conductivity. The drain region comprises a first drain section (112) having a first dopant concentration and a second drain section (116) having a second dopant concentration, the first dopant concentration being higher than the second dopant concentration. A first area (118) is formed in the second drain section (116), said first area comprising a dopant having a second type of conductivity which is different to the first type of conductivity. Furthermore, a second area (120) is formed in the substrate (100), below the second drain section (116), said second area comprising a dopant having the first type of conductivity. A channel region is provided in the substrate, between the source region (110) and the second drain section (116). |
