发明名称 RF POWER AMPLIFIER CIRCUIT
摘要 <p>A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).</p>
申请公布号 WO2003034586(A1) 申请公布日期 2003.04.24
申请号 IB2002004058 申请日期 2002.10.02
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