发明名称 Method for multi-depth trench isolation
摘要 A method for forming multi-depth apertures in a substrate is provided. The method includes first providing a pad stack atop a surface of a substrate having regions for forming apertures therein, the pad stack includes at least a top patterned masking layer. Next, at least one of the regions of the substrate is blocked with a first block mask, while leaving at least one other region of the substrate unblocked. A plurality of first apertures having a first depth is then formed in the unblocked region of the substrate using the patterned masking layer to define the plurality of first apertures. The first block mask is then removed; and thereafter a plurality of second apertures having a second depth is formed in regions of the substrate that were previously blocked by the first block mask using the same patterned masking layer to define the second apertures, while simultaneously increasing the first depth such that the first depth is deeper than the second depth.
申请公布号 US2003077875(A1) 申请公布日期 2003.04.24
申请号 US20010004152 申请日期 2001.10.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 MANDELMAN JACK A.;DIVAKARUNI RAMACHANDRA
分类号 H01L21/308;H01L21/762;(IPC1-7):H01L21/76;H01L21/461 主分类号 H01L21/308
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