| 摘要 |
The magnetic head of the present invention includes a dual layer induction coil having coil turns that are more accurately and reliably spaced due to the use of reactive ion etching fabrication techniques. Following the fabrication of the first magnetic pole (P1) an etch stop layer is deposited. Thereafter, a layer of an etchable insulation material is deposited, followed by the fabrication of an induction coil etching mask thereon. Utilizing a reactive ion etch process, induction coil trenches are thereafter etched into the etchable insulation material down to the etch stop layer. The first induction coil is then fabricated into the induction coil trenches, preferably utilizing standard electrodeposition techniques. Following a chemical mechanical polishing (CMP) step to remove excess induction coil material and the first induction coil etching mask, a second etch stop layer is deposited upon the first induction coil. Thereafter, a second layer of etchable insulation material is deposited followed by the fabrication of a second induction coil etching mask. A second reactive ion etch process is then conducted to etch the second induction coil trenches into the second etchable insulation material layer down to the second etch stop layer. The second induction coil is next fabricated into the second induction coil trenches, preferably utilizing electrodeposition techniques. Thereafter, excess induction coil material and the second induction coil etching mask are removed in a second CMP step. Thereafter, an insulation layer is deposited upon the second induction coil, followed by the fabrication of a second magnetic pole (P2) upon the insulation layer. In the preferred embodiments, the first and second etchable insulation material layers are composed of the same material and the first and second etch stop layers are also composed of the same material. Where the etchable insulation material is composed of an organic polymer, the first and second etch stop layers may be composed of SiO2 or Al2O3. Where the first and second etchable insulation material layers are composed of SiO2, the first and second etch stop layers are composed of Al2O3.
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