SINGLE CRYSTAL SILICON WAFER HAVING GETTERING MEANS AND METHOD FOR MAKING THEREOF

摘要

PURPOSE: A single crystal silicon wafer having a gettering means and a method for making thereof are provided to improve the gettering performance by forming a non-defect region without a COP(Crystal Originated Particle) on a surface of a wafer and the fine COP on a back side of the wafer. CONSTITUTION: A crystalline silicon ingot is sliced off. A grinding process and a cleaning process for both sides of the sliced silicon wafer are performed. The remaining damages are removed from a surface of the silicon wafer by performing a chemical etch process. A thermal process is performed under the temperature of 600 to 950 degrees centigrade. A polishing process is performed to remove the remaining crystalline defects. The cleaning process is performed. In the chemical etch process, the wafer is dipped into an etching bath or the chemical etchant is injected to the wafer.