| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MASK |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten the time required to fabricate an edge emphasized phase shifting mask. SOLUTION: A hole pattern is transferred to a photoresist film 6 on a wafer 4 by reduced projection exposure with an edge emphasized phase shifting resist mask RM1 having a phase shifting film 2 and a light shielding film 3 each comprising a resist film.</p> |
| 申请公布号 |
JP2003121977(A) |
申请公布日期 |
2003.04.23 |
| 申请号 |
JP20010314812 |
申请日期 |
2001.10.12 |
| 申请人 |
HITACHI LTD |
发明人 |
HOTTA SHOJI;HASEGAWA NORIO;TANAKA TOSHIHIKO |
| 分类号 |
G03F1/29;G03F1/54;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/29 |
| 代理机构 |
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代理人 |
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| 主权项 |
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