发明名称 |
High-frequency semiconductor device |
摘要 |
The invention relates to a high-frequency semiconductor device comprising a ceramic substrate (2); an element group (1a,1b,1c) including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate (2); and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group; wherein the composite resin material layer(10) is formed by a composite resin material including an epoxy resin and an inorganic filler material, and the composite resin material layer has a flat bottom surface on which electrodes (4) for connecting to the outside are formed. <IMAGE> |
申请公布号 |
EP1304909(A1) |
申请公布日期 |
2003.04.23 |
申请号 |
EP20020023221 |
申请日期 |
2002.10.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKEHARA, HIDEKI;YOSHIKAWA, NORIYUKI;KANAZAWA, KUNIHIKO;NAKATANI, SEIICHI |
分类号 |
H01L23/29;H01L23/31;H01L23/538;H01L23/66;H01L25/04;H01L25/18;H05K1/03;H05K1/11;H05K1/18;H05K3/28;H05K3/46 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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