| 摘要 |
When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I10 to I30) which are responsive to junction capacitances (C10 to C30) of respective unit thyristors (ST1, ST2, MT) are generated. The displacement currents (I10 to I30) flow into a compensation electrode (C) through paths in a P base layer (2) having resistances (R10 to R30), and further flow to an external power source through the cathode electrode (K) which is shortcircuited with the compensation electrode (C). The paths of the three displacement currents (I10 to I30) are separated from each other by resistances (R12, R23). Therefore, a forward bias voltage of a junction (D10) caused by the displacement current (I10) is attenuated by the displacement current (I20), while a forward bias voltage of a junction (D20) caused by the displacement current (I20) is attenuated by the displacement current (I30). Thus, it is possible to improve a thyristor of a multistage structure in dv/dt resistance, at no sacrifice of sensitivity. <IMAGE> |
