发明名称 METHOD FOR MODIFYING VOID DEFECTIVE PART OF PHOTOMASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for modifying the void defective part of a photomask capable of accurately modifying the void defective part of the light shielding pattern of the photomask. SOLUTION: In the method for modifying the void defective part of a photomask in which a void defective part generated in the mask pattern of a photomask or the like is modified with an FIB (focused ion beam) modifying machine, an engraved part 41 is formed by FIB etching with the FIB modifying machine in a transparent substrate comprising a quartz substrate in a part corresponding to the void defective part and the void defective part of the photomask is modified by imparting a light blocking effect to the part corresponding to the void defective part by the effects of lowering of transmittance by ions radiated on the engraved part 41 and lowering of transmittance due to a step formed along the boundary between the transparent substrate 11 and the engraved part 41.</p>
申请公布号 JP2003121991(A) 申请公布日期 2003.04.23
申请号 JP20010316458 申请日期 2001.10.15
申请人 TOPPAN PRINTING CO LTD 发明人 NAGASHIGE SUSUMU;HAYASHI KOKI
分类号 G03F1/72;G03F1/74;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/72
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