发明名称 SURFACE TREATMENT METHOD FOR POLYCRYSTALLINE Si INGOT
摘要 PROBLEM TO BE SOLVED: To provide a surface treatment method for a polycrystalline Si ingot for uniformly polishing a surface of the polycrystalline Si ingot, and removing a straining-crushing layer of the surface of the polycrystalline Si ingot. SOLUTION: A wheel type diamond brush 1 is constituted by radially implanting bristles of the brush in a cylindrical base part, and rotates around the rotational axis L1. The bristles of the brush include a diamond abrasive grain, and are implanted so as to extend in the radial direction with the rotational axis L1 of the base part as the center. The outer periphery of the wheel type diamond brush 1 for rotating with the rotational axis L1 as the center is pressed to the surface of the polycrystalline Si ingot to polish the surface of the polycrystalline Si ingot 2.
申请公布号 JP2003117800(A) 申请公布日期 2003.04.23
申请号 JP20010319503 申请日期 2001.10.17
申请人 SHARP CORP 发明人 KUMADA HIROSHI
分类号 B24C1/00;B24B29/00;B24B53/00;B24C11/00;(IPC1-7):B24B29/00 主分类号 B24C1/00
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