发明名称 MASK AND ITS MANUFACTURING METHOD AND EXPOSING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a mask which can increase the speed of lithography processing by making it possible to perform double-exposure operation using a combination of different phase shit methods without replacing a mask, and its manufacturing method and exposing device. SOLUTION: The mask 1 has at least two exposure patterns parts 2 and 3 and is used to form a desired pattern image by exposing the exposure pattern parts to an exposed body; and the mask has a 1st exposure area 2 having a Levenson phase shift pattern so formed that light beams passing through two adjacent light transmission parts have a phase difference and a 2nd exposure area having a half-tone phase shift pattern so formed that a light transmission part and a translucent part having specific light transmissivity are formed and light beams passing through the light transmission part and translucent part have a phase difference.</p>
申请公布号 JP2003121981(A) 申请公布日期 2003.04.23
申请号 JP20010322293 申请日期 2001.10.19
申请人 SONY CORP 发明人 ISHIKAWA KIICHI
分类号 G03F1/30;G03F1/32;G03F1/34;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/30
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