发明名称 METHOD FOR MANUFACTURING Mn-Ir ALLOY SPUTTERING TARGET FOR FORMING MAGNETIC THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an Mn-Ir alloy sputtering target for forming a magnetic thin film, which emits little gas and generates little particles in sputtering, and is used for forming a diamagnetic film superior in corrosion resistance and magnetic property. SOLUTION: The method for manufacturing the Mn-Ir alloy sputtering target for forming the magnetic thin film is characterized by preliminarily melting a raw Mn material at 1,250-1,500 deg.C; melting and alloying the high-purity Mn material provided by means of vacuum distillation at 1,100-1,500 deg.C, and the high purity Ir material provided by means of degasifying the raw Ir powder at 1,000-1,500 deg.C and melting it with an electron beam; and then casting it.</p>
申请公布号 JP2003119561(A) 申请公布日期 2003.04.23
申请号 JP20020202464 申请日期 2002.07.11
申请人 JAPAN ENERGY CORP 发明人 SHINDO YUICHIRO;SUZUKI TSUNEO
分类号 C22B9/02;C22B9/04;C22B9/22;C22B11/02;C22B61/00;C22C1/02;C22C5/04;C22C22/00;C23C14/34;(IPC1-7):C23C14/34 主分类号 C22B9/02
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