| 摘要 |
PROBLEM TO BE SOLVED: To provide an Si fine machining method capable of easily controlling the shape and the size of a fine area such as an Si thin line or fine grains, and easily and precisely forming a single or plural Si fine areas, and to provide a fine element produced by the Si fine machining method. SOLUTION: A conductive probe is disposed to face to an SOI substrate forming an Si layer of a semiconductor on an insulating layer, and the probe is made to relatively scan the Si layer. A fine oxidation Si area having any shape and oxidized in a thickness direction of the Si layer of the SOI substrate is formed, and an Si fine area is structured by the oxidation Si area.
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