| 发明名称 |
Deposition method of dielectric films having a low dielectric constant |
| 摘要 |
A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.
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| 申请公布号 |
US6551949(B2) |
申请公布日期 |
2003.04.22 |
| 申请号 |
US20010845052 |
申请日期 |
2001.04.27 |
| 申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
VULPIO MICHELE |
| 分类号 |
C23C16/42;C23C16/30;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/42 |
| 代理机构 |
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