| 发明名称 |
Method of forming a recessed magnetic storage element |
| 摘要 |
A method of forming self-aligned recessed MRAM structures is disclosed. Recessed pinned and sense magnetic layers of an MRAM stack are formed in recessed digit lines formed in an insulating layer.
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| 申请公布号 |
US6551852(B2) |
申请公布日期 |
2003.04.22 |
| 申请号 |
US20010877105 |
申请日期 |
2001.06.11 |
| 申请人 |
MICRON TECHNOLOGY INC. |
发明人 |
TUTTLE MARK E. |
| 分类号 |
G11C7/00;G11C11/14;G11C11/16;H01L21/00;H01L27/108;H01L27/22;H01L29/94;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
G11C7/00 |
| 代理机构 |
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