| 摘要 |
A back surface of a semiconductor chip having an integrated circuit for a 64M DRAM is die-bonded to a first surface of a die pad provided virtually in the middle of the thickness of encapsulations resin, an electrode thereof and an upper surface of the tip end of an inner lead are wire bonded with a metal wire. A back surface of a semiconductor chip having an integrated circuit for a flash memory is die-bonded to a second surface of the die pad, and an electrode arranged at an end on the longer side and a back surface of an inner lead root portion are wire-bonded with a metal wire. Then, these elements are integrally encapsulated with encapsulation resin. Thus, a thin, compact, reliable and inexpensive lead frame with large integration capacity and a resin-encapsulated semiconductor device using the lead frame produced by integrally resin-encapsulating a plurality of semiconductor chips including at least a center pad type semiconductor chip are provided.
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