发明名称 |
Noise immune transmission gate |
摘要 |
A transmission gate immune to noise that selectively delivers/draws charge to/from a noisy input node in order to ensure that an output node is not adversely affected by the noise on the input node is provided. Further, an NMOS pass gate immune to noise that delivers charge to a noisy input node in order to ensure that an output node is not adversely affected by the noise on the input node is provided. Further, a PMOS pass gate immune to noise that draws charge from a noisy input node in order to ensure that an output node is not adversely affected by the noise on the input node is provided.
|
申请公布号 |
US6552576(B1) |
申请公布日期 |
2003.04.22 |
申请号 |
US20020096611 |
申请日期 |
2002.03.12 |
申请人 |
SUN MICROSYSTEMS, INC. |
发明人 |
BOBBA SUDHAKAR;TRIVEDI PRADEEP |
分类号 |
H03K17/16;H03K17/687;(IPC1-7):H03K19/094 |
主分类号 |
H03K17/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|