SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks

摘要

An SiGe device configured to exhibit high velocity saturation resistance characteristic for buffering large voltages at low currents, wherein for circuit applications, the SiGe device is connected in series with a circuit element for protection of the circuit element. Advantageously, the device may be exploited as a buffer element providing ESD circuit protection for receiver devices, power supply clamp circuits and I/O driver circuits.