发明名称 |
Plasma processing apparatus and method of processing |
摘要 |
A plasma processing apparatus and a method of plasma processing using the same obviate a problem in which an excessive amount of processing gas is supplied momentarily during an initial stage of the gas supply. In the process of supplying gas, a main controller outputs to a mass flow controller a flow-rate setting command signal preset for "zero flow" prior to opening a gas shut-off valve, which opens/closes a gas supply passage, and another flow-rate setting command signal set for "a specific flow rate" only after the gas shut-off valve is opened.
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申请公布号 |
US6551444(B2) |
申请公布日期 |
2003.04.22 |
申请号 |
US20020118244 |
申请日期 |
2002.04.09 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
IWAI TETSUHIRO;FURUKAWA RYOTA |
分类号 |
H05H1/46;B01J19/08;C23C16/455;C23C16/50;C23C16/52;H01J37/32;H01L21/205;H01L21/302;(IPC1-7):H01L21/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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