| 摘要 |
An apparatus and method for integrating high-speed DRAM in a computer system including guard bands on either side of each data signal path between a memory module and a memory controller on a circuit board. The data signal paths are routed to avoid intermediate contacts, such as perforations in the circuit board for connector pins, while maintaining a target impedance level within a specified tolerance. A connector between the memory module and the memory controller includes contacts that are arranged so that at least every other contact is assigned to a non-data signal. The routing located between the non-data signal pins are assigned to a data signal. Non-data signal paths on the circuit board are routed through the contacts on either side of each data signal path, thereby forming guard bands on either side of the data signal path. An air gap is also positioned on either side of the data signal path.
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