发明名称 Method for removing organic contaminants from a semiconductor surface
摘要 A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method is practiced using gas phase processing. The tank is filled with a gas mixture, comprising water vapor and ozone.
申请公布号 US6551409(B1) 申请公布日期 2003.04.22
申请号 US19980156437 申请日期 1998.09.18
申请人 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM, VZW;NEDERLANDSE PHILIPS BEDRIJVEN B.V. 发明人 DEGENDT STEFAN;KNOTTER DIRK;HEYNS MARC;MEURIS MARC;MERTENS PAUL
分类号 G03F7/42;H01L21/306;H01L21/311;H01L21/768;(IPC1-7):H01L21/312 主分类号 G03F7/42
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