| 摘要 |
The object of this invention is to provide a method of manufacturing diodes, said method being a method of manufacturing semiconductor devices whereby an insulating film as the upper layer of the diode can be removed without causing film peeling or leakage. A photodiode is formed by forming a semiconductor layer of a second conduction type 12 upon the surface layer of a semiconductor layer of a first conduction type 11, and next forming a removable mask layer 30 which has etching selectivity with respect to the semiconductor layer of a second conduction type, or alternately, forming an anti-reflection film AR upon the top layer of the semiconductor layer of a second conduction type and then forming a removable mask layer which has etching selectivity with respect to the anti-reflection film. Next, a removable insulating layer I which has etching selectivity with respect to the mask layer is formed upon the top layer of the mask layer. Next, a hole H with its bottom surface consisting solely of the top surface of the mask layer is formed in the insulating layer by using the mask layer as the etching stopper, and next, the mask layer is removed in areas exposed within the interior of the hole selectively with respect to the semiconductor layer of a second conduction type or anti-reflection film and the insulating film.
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