发明名称 |
Method of polishing a stack of dielectric layers including a fluorine containing silicon oxide layer |
摘要 |
A first layer metal wire, an SiOF film and an F diffusion prevention film are formed on a surface of a base layer including a substrate, elements formed on the substrate and an insulator layer formed to cover the substrate and the elements. The F diffusion prevention film may be prepared from a silicon oxynitride film or a silicon oxide film containing Si-H bonds. A spacer film is formed on a surface of the F diffusion prevention film and its surface is flattened. A second layer metal wire is formed on a surface of the spacer film. Thus implemented is a semiconductor device comprising an F diffusion prevention film preventing F atoms contained in an SiOF film from diffusing into an upper metal wire with the F diffusion prevention film not etched in formation of the upper metal wire and a method of manufacturing a semiconductor device not directly polishing an SiOF film by CMP.
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申请公布号 |
US6551921(B2) |
申请公布日期 |
2003.04.22 |
申请号 |
US20010785248 |
申请日期 |
2001.02.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUURA MASAZUMI;GOTO KINYA |
分类号 |
H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476;H01L21/302;H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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