High brightness light emitting diode having a layer of distributed contacts

摘要

A high brightness light emitting diode having a distributed contact area comprising a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of a second conductivity type formed on the second cladding layer; a distributed contact area in a predetermined pattern formed on the window layer; a transparent conductive layer formed over the distributed contact area and the window layer, the transparent conductive layer being in ohmic contact with the distributed contact area and a Shottky barrier being formed between the transparent conductive layer and the window layer; and a second electrode formed on the transparent conductive layer.