发明名称 Method for forming copper pad redistribution and device formed
摘要 A method for forming copper pad redistribution on a flip chip and structures formed by the method are disclosed. The method is compatible with a copper dual damascene process such that, after a substrate surface is planarized by chemical mechanical polishing, a single photomask can be used to pattern a plurality of redistribution pads, redistribution vias and redistribution lines. After the openings are filled with copper by an electroplating or an electroless plating technique, the top of the structure is again chemical mechanical polished to produce a planarized surface and resulting redistribution pads and redistribution lines. A sealing layer such as silicon nitride may be coated on the final structure as a moisture barrier.
申请公布号 US6551856(B1) 申请公布日期 2003.04.22
申请号 US20000637223 申请日期 2000.08.11
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LEE TZE LIANG
分类号 H01L21/60;H01L23/31;H01L23/525;H01L23/532;(IPC1-7):H01L21/144 主分类号 H01L21/60
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