| 发明名称 |
Method of forming polish stop by plasma treatment for interconnection |
| 摘要 |
A semiconductor device in which an interconnection material is buried in a hole formed in an interlevel insulating film arranged on a semiconductor substrate includes a protective layer formed on the surface of the interlevel insulating film that has a lower polishing rate than that of the interconnection material in chemical mechanical polishing. A method of manufacturing this semiconductor device is also disclosed.
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| 申请公布号 |
US6551914(B1) |
申请公布日期 |
2003.04.22 |
| 申请号 |
US20000634940 |
申请日期 |
2000.08.08 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
SUZUKI MIEKO;KUBO AKIRA |
| 分类号 |
H01L21/28;H01L21/304;H01L21/318;H01L21/3205;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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