发明名称 |
Tuning absorption levels during laser thermal annealing |
摘要 |
A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, introducing dopants into the substrate, forming a tuning layer over at least a portion of the substrate, and activating the dopants using laser thermal annealing. The tuning layer causes an increase or a decrease in the amount of fluence absorbed by the portion of substrate below the tuning layer in comparison to an amount of fluence absorbed by a portion of substrate not covered by the tuning layer. Additional tuning layers can also be formed over the substrate.
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申请公布号 |
US6551888(B1) |
申请公布日期 |
2003.04.22 |
申请号 |
US20010020496 |
申请日期 |
2001.12.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TABERY CYRUS E.;PATON ERIC N.;YU BIN;XIANG QI;OGLE ROBERT B. |
分类号 |
H01L21/20;H01L21/268;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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