发明名称 |
METHOD FOR FABRICATING HALF-METALLIC MAGNETIC OXIDE |
摘要 |
PURPOSE: A method for fabricating half-metallic magnetic oxide is provided to supply enough energy to dissolve oxygen and generate the correct composition ratio between different metal ions such as Fe2+ and Fe3+. CONSTITUTION: A semiconductor substrate(11) is prepared on its holder(12), on the opposite side of which a target(14) is installed. Reaction gas and activation gas are supplied by a gas inlet(17). An electric power supplying unit(19) is prepared to induce the electric discharge. A ring or mesh type conductor(20), making plasma ions penetrate through its holes, is installed between the holder and target, with its own power supply(29).
|
申请公布号 |
KR20030031411(A) |
申请公布日期 |
2003.04.21 |
申请号 |
KR20020059433 |
申请日期 |
2002.09.30 |
申请人 |
HANYANG HAK WON CO., LTD. |
发明人 |
HONG, JIN PYO;KIM, CHAE OK;LEE, CHANG HYO;LEE, SEONG BOK;YOON, GAP SU |
分类号 |
H01L21/203;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|