发明名称 METHOD FOR FABRICATING HALF-METALLIC MAGNETIC OXIDE
摘要 PURPOSE: A method for fabricating half-metallic magnetic oxide is provided to supply enough energy to dissolve oxygen and generate the correct composition ratio between different metal ions such as Fe2+ and Fe3+. CONSTITUTION: A semiconductor substrate(11) is prepared on its holder(12), on the opposite side of which a target(14) is installed. Reaction gas and activation gas are supplied by a gas inlet(17). An electric power supplying unit(19) is prepared to induce the electric discharge. A ring or mesh type conductor(20), making plasma ions penetrate through its holes, is installed between the holder and target, with its own power supply(29).
申请公布号 KR20030031411(A) 申请公布日期 2003.04.21
申请号 KR20020059433 申请日期 2002.09.30
申请人 HANYANG HAK WON CO., LTD. 发明人 HONG, JIN PYO;KIM, CHAE OK;LEE, CHANG HYO;LEE, SEONG BOK;YOON, GAP SU
分类号 H01L21/203;(IPC1-7):H01L21/203 主分类号 H01L21/203
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