| 发明名称 |
GATE OXIDE FILM, ELEMENT, AND METHOD AND MATERIAL FOR FORMING GATE OXIDE FILM |
| 摘要 |
PURPOSE: To provide a gate oxide film hardly causing a leak of a charge and having a high dielectric constant and to provide, in its turn, an element having this gate oxide film. CONSTITUTION: The gate oxide film is constituted by using one or two or more chemical elements selected from the group consisting of Zr, Hf and Ln and by using Si, O and N.
|
| 申请公布号 |
KR20030031409(A) |
申请公布日期 |
2003.04.21 |
| 申请号 |
KR20020054411 |
申请日期 |
2002.09.10 |
| 申请人 |
TRI CHEMICAL LABORATORIES INC. |
发明人 |
MACHIDA HIDEAKI;OSHITA YOSHIO;KADA TAKESHI;HOSHINO ASAKO;ISHIKAWA MASATO |
| 分类号 |
H01L29/78;H01L21/31;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
