| 摘要 |
PURPOSE: A thin film transistor using poly silicon is provided to suppress formation of projections on the surface of a semiconductor during a poly crystallization process by piling up a planarization layer on an amorphous silicon layer before it. CONSTITUTION: A semiconductor layer(20) made up of poly silicon consists of a channel, source, and drain region(21,22,23). A planarization layer(90) is piled up on the surface of the semiconductor layer. A gate isolation layer(30) is formed to cover the resultant structure, on which a gate electrode(40) is formed. Contact holes(52,53) are formed to expose the source and drain region through the gate electrode and an interlayer dielectric(50), on which, a source and drain electrode(62,63) are formed. A protection layer(70) is formed on the interlayer dielectric.
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