发明名称 INTERNAL REFERENCE VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR DEVICE, AND INTERNAL SUPPLY VOLTAGE GENERATING CIRCUIT PROVIDED THEREWITH
摘要 PROBLEM TO BE SOLVED: To provide an internal reference voltage generating circuit capable of regulating an internal reference voltage value by a temperature change, and to provide an internal supply voltage generating circuit capable of regulating an internal supply voltage value by the temperature change, using the internal reference voltage generating circuit. SOLUTION: This internal reference voltage generating circuit is provided with a differential amplifier for amplifying differentially a first reference voltage input via a first input terminal and an input voltage input via a second input terminal to output an internal reference voltage via an output terminal. A first resistance part is connected between the output terminal of the differential amplifier and the second input terminal of the amplifier, and a second resistance part is connected between the second reference terminal voltage and a second input terminal of the differential amplifier. The internal reference voltage generating circuit is also provided with a temperature-dependent variable voltage generator for generating a voltage varying according to the temperature change, and a resistance value in the first resistance part or the second resistance part is controlled by the voltage varying according to the temperature change, so as to get variable thereby.
申请公布号 JP2003114728(A) 申请公布日期 2003.04.18
申请号 JP20020190099 申请日期 2002.06.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SIM JAE-YOON
分类号 H01L27/04;G05F3/24;G11C5/14;H01L21/822;H03F3/45;(IPC1-7):G05F3/24 主分类号 H01L27/04
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