发明名称 |
METHOD AND APPARATUS FOR SUBSTRATE TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus whose occupation area is small and operation efficiency is high. SOLUTION: A plurality of reaction chambers 70 are provided to a wall 53 of a wafer carry chamber 50 separated apart each other stacked in the vertical direction. A plurality of wafer storage chambers 30 are provided to a wall 54 of the wafer carry chamber 50 apart mutually stacked in the vertical direction. A gate valve 93 is provided between a plurality of reaction chambers 70 and the wafer carry chamber 50, and a gate valve 92 is provided between a plurality of wafer storage chambers 30 and the wafer carry chamber 50. The wafer carry chamber 50 is constituted capable of being evacuated, and a wafer carry vacuum robot 60, which can carry a substrate in vacuum, in between the reaction chamber 70 and the wafer storage chamber 30, is provided in the inside thereof. |
申请公布号 |
JP2003115523(A) |
申请公布日期 |
2003.04.18 |
申请号 |
JP20020175038 |
申请日期 |
2002.06.14 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YONEMITSU SHUJI;KANO RIICHI;YOSHIDA HISASHI;WATABIKI SHINICHIRO;YOSHIDA YUJI;SHIMURA HIDEO;SUGIMOTO TAKESHI;YUYA YUKINORI;IKEDA KAZUTO |
分类号 |
H01L21/677;H01L21/22;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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