发明名称 METHOD AND APPARATUS FOR SUBSTRATE TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus whose occupation area is small and operation efficiency is high. SOLUTION: A plurality of reaction chambers 70 are provided to a wall 53 of a wafer carry chamber 50 separated apart each other stacked in the vertical direction. A plurality of wafer storage chambers 30 are provided to a wall 54 of the wafer carry chamber 50 apart mutually stacked in the vertical direction. A gate valve 93 is provided between a plurality of reaction chambers 70 and the wafer carry chamber 50, and a gate valve 92 is provided between a plurality of wafer storage chambers 30 and the wafer carry chamber 50. The wafer carry chamber 50 is constituted capable of being evacuated, and a wafer carry vacuum robot 60, which can carry a substrate in vacuum, in between the reaction chamber 70 and the wafer storage chamber 30, is provided in the inside thereof.
申请公布号 JP2003115523(A) 申请公布日期 2003.04.18
申请号 JP20020175038 申请日期 2002.06.14
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YONEMITSU SHUJI;KANO RIICHI;YOSHIDA HISASHI;WATABIKI SHINICHIRO;YOSHIDA YUJI;SHIMURA HIDEO;SUGIMOTO TAKESHI;YUYA YUKINORI;IKEDA KAZUTO
分类号 H01L21/677;H01L21/22;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/677
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