发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a QC method of a memory cell interlaminar film which can be carried out readily in a short time by using a memory array and a single memory formed in a scribe region without subjecting a memory cells to stress, and to provide a manufacturing method of a non-volatile semiconductor memory device by adopting the QC method. SOLUTION: After a single nonvolatile memory is formed in a region which is different from a chip on a semiconductor wafer and an interlaminar film QC process for evaluating write-in saturation properties using a single memory is adopted after a wafer manufacturing process is finished, only nondefective items are cut out to chips and subjected to resin sealing. Thereby, yield after cutting to the chip can be improved.
申请公布号 JP2003115515(A) 申请公布日期 2003.04.18
申请号 JP20020169400 申请日期 2002.06.11
申请人 HITACHI LTD 发明人 MIURA AKIYOSHI;KUME HITOSHI;NISHIMOTO TOSHIAKI
分类号 G01R31/28;G01R31/3183;G11C29/00;G11C29/56;H01L21/66;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/66;G01R31/318;H01L21/824 主分类号 G01R31/28
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