发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a QC method of a memory cell interlaminar film which can be carried out readily in a short time by using a memory array and a single memory formed in a scribe region without subjecting a memory cells to stress, and to provide a manufacturing method of a non-volatile semiconductor memory device by adopting the QC method. SOLUTION: After a single nonvolatile memory is formed in a region which is different from a chip on a semiconductor wafer and an interlaminar film QC process for evaluating write-in saturation properties using a single memory is adopted after a wafer manufacturing process is finished, only nondefective items are cut out to chips and subjected to resin sealing. Thereby, yield after cutting to the chip can be improved.
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申请公布号 |
JP2003115515(A) |
申请公布日期 |
2003.04.18 |
申请号 |
JP20020169400 |
申请日期 |
2002.06.11 |
申请人 |
HITACHI LTD |
发明人 |
MIURA AKIYOSHI;KUME HITOSHI;NISHIMOTO TOSHIAKI |
分类号 |
G01R31/28;G01R31/3183;G11C29/00;G11C29/56;H01L21/66;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/66;G01R31/318;H01L21/824 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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