NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a method of fabricating the same are provided to realize high device integration by forming the selection gate at a sidewall of the memory gate in the shape of a spacer. CONSTITUTION: A nonvolatile memory device includes a semiconductor substrate, and a memory gate(219m) with a floating gate(210a), a gate interlayer dielectric(212a) and a control gate electrode(214a) sequentially deposited on the semiconductor substrate. A tunneling oxide layer(208) is interposed at the predetermined area between the floating gate(210a) and the semiconductor substrate. A selection gate(224s) covers the one sidewall of the memory gate(219m) and a specific area of the semiconductor substrate. A transistor insulating layer(223) is interposed between the selection gate(224s) and the memory gate(219m). A drain region(226d) is existent within the area of the semiconductor substrate sided with the selection gate(224s). A source region(226s) is existent with the area of the semiconductor substrate sided with the memory gate(219m). A channel region(204) is existent within the area of the semiconductor substrate under the transistor insulating layer(223) while being extended to the area of the semiconductor substrate under the tunneling oxide layer(208).