发明名称 POLYMER, RESIST MATERIAL, AND METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a resist material which has extremely high resolution and etching resistance at a practical use level and is useful for precision microfabrication, to provide a method for forming a pattern with the resist material, and further to provide a polymer useful as a base resin for the resist material. SOLUTION: This polymer having a weight-average mol.wt. of 1,000 to 500,000 is characterized by containing one or more repeating units selected from repeating units represented by the general formulas (1) to (3) and a repeating unit represented by the general formula (4).
申请公布号 JP2003113213(A) 申请公布日期 2003.04.18
申请号 JP20020210437 申请日期 2002.07.19
申请人 SHIN ETSU CHEM CO LTD 发明人 NISHI TSUNEHIRO;KANOU TAKESHI
分类号 G03F7/039;C08F220/18;C08F220/28;H01L21/027 主分类号 G03F7/039
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