发明名称 |
POLYMER, RESIST MATERIAL, AND METHOD FOR FORMING PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist material which has extremely high resolution and etching resistance at a practical use level and is useful for precision microfabrication, to provide a method for forming a pattern with the resist material, and further to provide a polymer useful as a base resin for the resist material. SOLUTION: This polymer having a weight-average mol.wt. of 1,000 to 500,000 is characterized by containing one or more repeating units selected from repeating units represented by the general formulas (1) to (3) and a repeating unit represented by the general formula (4). |
申请公布号 |
JP2003113213(A) |
申请公布日期 |
2003.04.18 |
申请号 |
JP20020210437 |
申请日期 |
2002.07.19 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
NISHI TSUNEHIRO;KANOU TAKESHI |
分类号 |
G03F7/039;C08F220/18;C08F220/28;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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