发明名称 ELECTROSTATIC CHUCKING METHOD OF RETICLE OR WAFER IN CHARGED PARTICLE BEAM ALIGNER
摘要 <p>PROBLEM TO BE SOLVED: To provide an electrostatic chucking method of a reticle or a wafer in a charged particle beam aligner for extremely reducing a placement error that is generated due to stress in chucking and cannot be corrected. SOLUTION: Chucking a reticle 5 as shown in (b) having warpage as shown in (a) by applying a voltage to electrodes 2A and 2B distorts the reticle 5 due to stress from a chucked surface. Therefore, as shown in (c), the voltage in the electrodes 2A and 2B is weakened and the chuck force is temporarily weakened. Then, stress that is present on the chucked surface allows the reticle to slide sideways, thus relaxing the stress. Then, after specific time passes, a complete chucked state as shown in (b) is restored again. Generating the states of (b) and (c) continuously for a plurality of times finally cancels the chuck stress. Then, complete chucking allows the reticle to be chucked in a normal state close to a flat state as shown in (d).</p>
申请公布号 JP2003115442(A) 申请公布日期 2003.04.18
申请号 JP20010308192 申请日期 2001.10.04
申请人 NIKON CORP 发明人 NAKANO KATSUSHI
分类号 G03F7/20;H01J37/305;H01L21/027;H01L21/683;H02N13/00;(IPC1-7):H01L21/027;H01L21/68 主分类号 G03F7/20
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