| 摘要 |
PROBLEM TO BE SOLVED: To provide an embedded ridge type semiconductor laser in which the crystalline deterioration of a third upper clad layer is prevented when a current block layer contains Al, an operating voltage is low and an efficiency is high. SOLUTION: The semiconductor laser comprises a first conductivity type lower clad layer 103 formed on a first conductivity type semiconductor substrate 101, an active layer 104, a second conductivity type first upper clad layer 105, a ridge formed of a second conductivity type second upper clad layer 107, a current block layer 110 formed to hold the ridge and having a lower refractive index than that of the second upper clad layer and containing Al, and a second conductivity type third upper clad layer 112 formed on the ridge and the current block layer and having a larger band gap than that of the active layer in such a manner that the ridge has a reverse mesa shape.
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