| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage that inhibits an increase in chip area and at the same time can reduce a difference in a read speed that is generated between far- and near-end-side memory cells. SOLUTION: The semiconductor storage has a plurality of memory cells 11 that are provided at cross portions of a plurality of word lines WL that are extended in a row direction and bit lines BL and /BL, a selection circuit 12 that is connected to the word lines WL and selects the memory cell 11, and a read circuit 13 that is connected to the bit lines BL and /BL and reads storage information from the memory cell 11. In the group of the memory cell 11 that is connected to the same word line WL, the current drive capability of the memory cell 11B on the far-end-side that is far from the selection circuit 12 is set higher than the current drive capability of the near-end-side memory cell 11A that is near the selection circuit 12. |
