| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an ohmic contact and a method of fabricating the same device. SOLUTION: A semiconductor device is provided with a substrate, a p-type GaN layer formed on the substrate, and a p-type InXGa1- XN layer on the p-type GaN layer. A good junction surface having a low ohmic contact resistance is formed between the semiconductor and metal electrode. A light emitting device including the ohmic contact is provided with a substrate, a buffer layer formed on the substrate, an n-type covering layer formed on the buffer layer, an active layer formed on the n-type covering layer, a p-type covering layer formed on the active layer, a p-type InXGa1- XN layer formed on the n-type covering layer, and a metal layer formed on the p-type InXGa1- XN layer. A good junction surface having a low ohmic contact resistance is formed between the semiconductor and metal electrode. |
