| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase resolution by improving contact inferiority between an original plate and a substrate caused by film thickness unevenness in a thick resist applied onto the substrate. SOLUTION: A photomask 1 as the original plate for exposure has a level difference part 1c on one side surface thereof facing a wafer 3 as the substrate to be exposed, has an inside thick part 1a and an outside thin part 1b and the inside thick part 1a is smaller than the wafer 3 to be exposed. A light shielding film 2 for shielding light flux 5 emitted from a light source is disposed on a surface part of a light source side corresponding to the level difference part 1c. The inside thick part 1a is set to a position of a pattern transferring part 4b by avoiding an outer peripheral part 4a of the wafer 3, a surface of the outside thin part 1b near the level difference part 1c is arranged by being faced to a surface of the outer peripheral part 4a of the wafer 3 and a surface of the outside thin part 1b near an edge of the outer peripheral part is supported by a chuck 6.</p> |
