| 摘要 |
PROBLEM TO BE SOLVED: To accurately evaluate a junction capacity in each junction interface based on electric field strength by accurately measuring the field strength in each junction interface of a semiconductor device based on a PR spectrum in a junction capacity evaluation method, and to provide a junction capacity measuring apparatus of a semiconductor. SOLUTION: Data in an energy region exceeding a band gap is subjected to Fourier transformation among data on a photoreflectance signal from a semiconductor device. Thereby, the data is separated to different frequency band regions W1, W2 obtained from each junction interface of a semiconductor device. Thereby, data obtained from one junction interface is prevented from being used for the measurement of electric field at another junction interface. Therefore, the electric field strength in each junction interface of a semiconductor can be measured accurately, and the junction capacity in each junction interface can be evaluated accurately based on the electric field strength.
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