| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the characteristics in high frequency and high output of a high output FET having a large gate width can be satisfactorily are exerted by a matching circuit having an impedance conversion function with less deteriorated performance. SOLUTION: A semiconductor device, in which an input lead or an output lead electrically connected to a semiconductor chip is fixed on a frame made of an insulating material for housing the semiconductor chip, has a matching circuit having a constitution in which at least either the input lead or the output lead is connected to a path having an opened end face supported by the frame on a portion where the lead is fixed on the frame, and the lead is provided with an open stub. According to the constitution, since the impedance conversion is performed by the open stub, the lead is reinforced in an impedance conversion function, and this makes it possible to make an impedance conversion ratio required for an internal matching circuit small. |
