| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition suitable for lithography with, e.g., an ArF or KrF excimer laser, having good resolution and sensitivity and giving improved line edge roughness. SOLUTION: The chemically amplified positive resist composition comprises an acid generator containing a benzenesulfonate ion of formula (I) (where Q<1> -Q<5> are each H, hydroxyl, a 1-12C perfluoroalkyl, a 1-12C alkyl, a 1-12C alkoxy or halogen) and an alkali-insoluble or slightly alkali-soluble resin which has a polymerization unit having an acid-labile group and is made alkali-soluble by the action of an acid, wherein a polymerization unit of an alicyclic lactone of formula (IIa) or (IIb) (where R<1> -R<4> are each H or methyl; n is a number of 1-3; and when R<2> or R<4> shows a plurality of symbols R<2> or R<4> , these may be the same or different) is contained in the resin. |
