| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing the occurrence of migration due to residue left in the base of an insulating resin layer at the base of a pattern, and a method for making conductor width at the top of a pattern layer wider than conductor width by conventional technology for forming high density wiring. SOLUTION: In a process for forming a wiring pattern, a thin film conductor layer by a plating method is formed after the insulating resin layer is formed. A photosensitive resist layer is formed and a resist layer for forming the necessary pattern is formed by the photo-process method of exposure and development. The manufacturing method of a semiconductor device substrate is provided with a process for performing plasma processing on a whole face, a process for performing electrolytic copper plating, a process for peeling the resist layer, and a process for removing the thin film conductor layer. Thus, the semiconductor device substrate where the occurrence of migration can be prevented and conductor width can be widen can be supplied. |
