METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor single crystal which makes the single crystal having excellent crystallinity obtainable by decreasing the dislocation density in a grown crystal and eliminating the stress from a seed crystal. SOLUTION: In an LED (liquid sealed kiroporous) process of growing the single crystal by immersing the seed crystal covered with a refractory cover on its surface into a raw material melt covered with a liquid sealing agent and gradually lowering the temperature of the raw material meet, gas of the amount smaller than the amount of the gas generated by the decomposition of the seed crystal is made to flow to the outside of the cover in the process of growing the single crystal by immersing the entire part or a portion of the refractory cover into the liquid sealing agent, by which the seed crystal is decomposed at a prescribed speed.