SINGLE CRYSTAL GaN SUBSTRATE, METHOD FOR GROWING SINGLE CRYSTAL GaN AND METHOD FOR MANUFACTURING SINGLE CRYSTAL GaN SUBSTRATE

摘要

PURPOSE: A single crystal GaN substrate, a method for growing single crystal GaN and a method for manufacturing the single crystal GaN substrate are provided to be capable of exactly controlling the positions of voluminous defect accumulating regions and obtaining a low voltage GaN substrate. CONSTITUTION: A GaN epitaxial layer(42) having a thickness of about 2μm, is formed at the upper portion of a sapphire substrate(41) by carrying out an MOCVD process. At this time, the surface of the GaN epitaxial layer becomes the 'C' surface of GaN. After forming an SiO2 layer having a thickness of 100 nm, at the upper portion of the resultant structure, a mask pattern(43) is formed by selectively patterning the SiO2 layer. At this time, the mask pattern is formed into a stripe type structure for exposing the predetermined portions of the GaN epitaxial layer.