METHOD FOR FORMING ELECTRODE PROTECTION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an electrode protection layer of a semiconductor device is provided to prevent a peeling phenomenon by forming a diffusion barrier layer on an interface between a gate electrode and a refractory metal and by avoiding an oxide layer generated by a combination of oxygen and silicon on the interface between the gate electrode and the refractory metal. CONSTITUTION: A semiconductor substrate(10) is prepared. A conductive layer pattern is formed on the semiconductor substrate. The conductive layer pattern is reacted with gas including oxygen or nitrogen to form a protection layer of an amorphous state on the conductive layer pattern.