| 发明名称 |
DRY ETCHING GAS AND METHOD FOR DRY ETCHING |
| 摘要 |
A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.
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| 申请公布号 |
KR20030031180(A) |
申请公布日期 |
2003.04.18 |
| 申请号 |
KR20037003418 |
申请日期 |
2003.03.07 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/3065;H01L21/3105;H01L21/311;H01L21/768 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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