发明名称 MICROWAVE PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND MICROWAVE RADIATING MEMBER
摘要 A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.
申请公布号 KR20030031166(A) 申请公布日期 2003.04.18
申请号 KR20037002437 申请日期 2003.02.20
申请人 发明人
分类号 H01L21/3065;H01J37/32 主分类号 H01L21/3065
代理机构 代理人
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