发明名称 CHEMICALLY AMPLIFIED NEGATIVE PHOTORESIST COMPOSITION FOR THICK FILM, PHOTORESIST BASE MATERIAL AND METHOD OF FORMING BUMP USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a chemically amplified negative photoresist composition for thick films having high sensitivity and good plating resistance and suitable for the formation of thick films favorable for use as materials for forming bumps, re-wiring and a metal post used in a CSP manufacturing technique and to provide a photoresist base material and a method for forming bumps using the same. SOLUTION: In the chemically amplified negative photoresist composition for thin films having 20-150 &mu;m thickness including (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with a radiant ray and (C) a compound which takes part in a crosslinking reaction in the presence of an acid, the component (A) comprises a mixture of (a1) a novolak resin having a weight average molecular weight of 5,000-10,000 and (a2) a copolymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of <=5,000.
申请公布号 JP2003114531(A) 申请公布日期 2003.04.18
申请号 JP20020110283 申请日期 2002.04.12
申请人 TOKYO OHKA KOGYO CO LTD 发明人 WASHIO YASUSHI;SAITO KOJI;OKUI TOSHIKI;KOMANO HIROSHI
分类号 G03F7/038;C08G81/02;G03F7/004;G03F7/032;H01L21/027;H01L21/60 主分类号 G03F7/038
代理机构 代理人
主权项
地址